A computer systems thermal architect at the UNLV Howard R. Hughes College of Engineering is designing a high-conductivity copper heat-spreader block mounted directly above an enterprise artificial intelligence (AI) accelerator microprocessor.
The heat-spreader block occupies a 3D rectangular box domain in centimeters:
B=[0,4]×[0,4]×[0,2]
with volumetric thermal power generation
q(x,y,z)=3x2yz W/cm3.
Step-by-Step Solution:
Calculate Geometric Volume:
State the Volume of a Rectangular Box Formula (defined in Triple Integrals over a Rectangular Region):
V(B)=(b−a)(d−c)(s−r)
Substitute the domain limits:
V(B)=(4−0)(4−0)(2−0)=4×4×2=32 cm3
Set Up the Triple Integral for Total Heat Dissipation:
State the Total Quantity Accumulation Formula via Triple Integration:
Ptotal=∭Bq(x,y,z)dV
Using the differential volume element dV=dzdydx:
Ptotal=∫04∫04∫023x2yzdzdydx
Evaluate the Triple Integral:
Because the integrand is algebraically separable and the boundaries are constants, apply Separability for Triple Integrals over Rectangular Boxes:
Ptotal=3(∫04x2dx)(∫04ydy)(∫02zdz)
Evaluate the x-integral:
∫04x2dx=[3x3]04=364−0=364
Evaluate the y-integral:
∫04ydy=[2y2]04=216−0=8
Evaluate the z-integral:
∫02zdz=[2z2]02=24−0=2
Multiply the evaluated factors:
Ptotal=3×(364)×8×2=64×16=1024 W
Compute Average Volumetric Generation Rate:
State the Average Value Formula for a 3D Function:
q=V(B)1∭Bq(x,y,z)dV=V(B)Ptotal
Substitute the calculated values:
q=32 cm31024 W=32 W/cm3
Meaning of the Answer & Real-Life Application:
- Quantitative Interpretation: The total heat generation rate across the copper spreader block is 1024 W (approximately 1.024 kW), with an average volumetric energy density of 32 W/cm3.
- Engineering Application: In data-center thermal management, an instantaneous heat load of over 1 kW concentrated on a 4 cm×4 cm footprint represents extreme thermal flux (≈64 W/cm2). Knowing the exact total thermal load allows cooling system engineers to size the coolant volumetric flow rate V˙=ρcpΔTPtotal in a pumped liquid cold plate to ensure the junction temperature Tj never exceeds the 85∘C silicon degradation threshold.